Thermal Oxidation Mechanism of Silicon Carbide
نویسندگان
چکیده
منابع مشابه
Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute threedimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4Hand 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known grow...
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